High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat) 3000V 12A 3.2V Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM T stg TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load TC = 25°C Plastic Body for 10s TO-263HV TO-268HV Maximum Ratings 3000 V
Datasheet Details
Part number:
IXBA12N300HV
Manufacturer:
IXYS
File Size:
1.86 MB
Description:
Bipolar mos transistor.