IXBA12N300HV Datasheet - IXYS

IXBA12N300HV Bipolar MOS Transistor

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat)  3000V 12A 3.2V Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM T stg TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load TC = 25°C Plastic Body for 10s TO-263HV TO-268HV Maximum Ratings 3000 V.

IXBA12N300HV Features

* High Voltage Package

* High Blocking Voltage

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Ge

IXBA12N300HV Datasheet (1.86 MB)

IXBA12N300HV Datasheet Preview — Preview of IXBA12N300HV PDF

Datasheet Details

Part number:

IXBA12N300HV

Manufacturer:

IXYS

File Size:

1.86 MB

Description:

Bipolar mos transistor.

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IXBA12N300HV Bipolar MOS Transistor IXYS

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