* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Ge
IXBA12N300HV Datasheet (1.86 MB)
IXBA12N300HV
IXYS
1.86 MB
Bipolar mos transistor.
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBA12N300HV IXBT12N300HV
VCES = IC110 = VCE(sat)
3000V 1.
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