IXBA12N300HV Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat)  3000V 1.

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Datasheet Specifications

Part number: IXBA12N300HV
Manufacturer: IXYS
File Size: 1.86 MB
Datasheet: IXBA12N300HV-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100496B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

IXBA12N300HV Distributors

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IXBA12N300HV Bipolar MOS Transistor IXYS

IXYS IXBA12N300HV-like datasheet