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IXBA16N170AHV - Bipolar MOS Transistor

IXBA16N170AHV Description

Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat.

IXBA16N170AHV Features

* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBA16N170AHV Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2013 IXYS CORPORATION, All Rights Reserved DS100551(8/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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Datasheet Details

Part number
IXBA16N170AHV
Manufacturer
IXYS
File Size
176.63 KB
Datasheet
IXBA16N170AHV-IXYS.pdf
Description
Bipolar MOS Transistor

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Bipolar MOS Transistor IXYS
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