IXBA16N170AHV Bipolar MOS Transistor

IXYS

Description

Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat.

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Datasheet Specifications

Part number: IXBA16N170AHV
Manufacturer: IXYS
File Size: 176.63 KB
Datasheet: IXBA16N170AHV-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2013 IXYS CORPORATION, All Rights Reserved DS100551(8/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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IXBA16N170AHV Bipolar MOS Transistor IXYS

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