IXBA16N170AHV Datasheet - IXYS

IXBA16N170AHV Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat)  1700V 16A 6.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 16 A 10 A 40 A VGE = 15V, TVJ = 125°C, RG = 3.

IXBA16N170AHV Features

* High Voltage Package

* High Blocking Voltage

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Ge

IXBA16N170AHV-IXYS.pdf

IXBA16N170AHV Datasheet Preview — Preview of IXBA16N170AHV PDF

Datasheet Details

Part number:

IXBA16N170AHV

Manufacturer:

IXYS

File Size:

176.63 KB

Description:

Bipolar mos transistor.

📁 Related Datasheet

IXBA12N300HV Bipolar MOS Transistor (IXYS)

IXBA14N300HV Bipolar MOS Transistor (IXYS)

IXBD4410 Half Bridge Driver Chipset (IXYS Corporation)

IXBD4411 Half Bridge Driver Chipset (IXYS Corporation)

IXBF12N300 Monolithic Bipolar MOS Transistor (IXYS)

IXBF14N300 Bipolar MOS Transistor (IXYS)

IXBF20N300 Bipolar MOS Transistor (IXYS)

IXBF20N360 Bipolar MOS Transistor (IXYS)

TAGS

IXBA16N170AHV IXBA16N170AHV Bipolar MOS Transistor IXYS

IXBA16N170AHV Distributor