Datasheet Specifications
- Part number
- IXBH6N170
- Manufacturer
- IXYS
- File Size
- 174.36 KB
- Datasheet
- IXBH6N170-IXYS.pdf
- Description
- BIMOSFET Monolithic Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR V.
Applications
* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS99004C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 6A, VCE = 1IXBH6N170 Distributors
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