Datasheet Details
Part number:
IXBH32N300HV, IXBT32N300HV
Manufacturer:
IXYS
File Size:
317.18 KB
Description:
Bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH32N300HV, IXBT32N300HV.
Please refer to the document for exact specifications by model.
IXBH32N300HV, IXBT32N300HV, Bipolar MOS Transistor
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat) 3000V 32A 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 80 A 32 A 280 A VGE = 15V, TVJ = 125°C, RG = 10 ICM =
IXBH32N300HV Features
* High Blocking Voltage
* High Voltage Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacito
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