IXBH32N300HV, IXBT32N300HV Bipolar MOS Transistor

IXYS

Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat.

📥 Download Datasheet

IXBH32N300HV Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBH32N300HV, IXBT32N300HV. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBH32N300HV, IXBT32N300HV
Manufacturer: IXYS
File Size: 317.18 KB
Datasheet: IXBT32N300HV-IXYS.pdf
Description: Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBH32N300HV, IXBT32N300HV.
Please refer to the document for exact specifications by model.

Features

* High Blocking Voltage
* High Voltage Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2016 IXYS CORPORATION, All Rights Reserved DS100706(02/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)

IXBH32N300HV Distributors

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IXBT32N300HV Bipolar MOS Transistor IXYS

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