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IXBH32N300HV, IXBT32N300HV - Bipolar MOS Transistor

IXBH32N300HV Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat.

IXBH32N300HV Features

* High Blocking Voltage
* High Voltage Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBH32N300HV Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2016 IXYS CORPORATION, All Rights Reserved DS100706(02/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXBH32N300HV, IXBT32N300HV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXBH32N300HV, IXBT32N300HV
Manufacturer
IXYS
File Size
317.18 KB
Datasheet
IXBT32N300HV-IXYS.pdf
Description
Bipolar MOS Transistor
Note
This datasheet PDF includes multiple part numbers: IXBH32N300HV, IXBT32N300HV.
Please refer to the document for exact specifications by model.

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Bipolar MOS Transistor IXYS
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