| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
IXYS Corporation | IXBH9N160G | IGBT 1600V 9A TO-247AD | DigiKey | 0 | 0 |
$0
|
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Download Datasheet (177.33 KB)
IXBH9N160G
IXYS Corporation
177.33 KB
Monolithic bipolar mos transistor.
High Voltage BiMOSFETTM IXBH9N160G
Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode MOS.
FET Transistor
VCES = 1600V IC25 = 9A VCE(sat) 7.0V tfi(typ) = 70ns
TO-247
Symbol
VCES VCGR
V.
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