IXBH9N160G Datasheet - IXYS Corporation

IXBH9N160G Monolithic Bipolar MOS Transistor

High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat)  7.0V tfi(typ) = 70ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 25°C, 1ms CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27 TC = 25°C Maximum Lead Temperature for Soldering 1.6 m.

IXBH9N160G Features

* High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON

* MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage

* Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Charact

IXBH9N160G Datasheet (177.33 KB)

IXBH9N160G Datasheet Preview — Preview of IXBH9N160G PDF

Datasheet Details

Part number:

IXBH9N160G

Manufacturer:

IXYS Corporation

File Size:

177.33 KB

Description:

Monolithic bipolar mos transistor.

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IXBH9N160G Monolithic Bipolar MOS Transistor IXYS Corporation

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