IXBH9N160G Monolithic Bipolar MOS Transistor

IXYS Corporation

Description

High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat) .

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Datasheet Specifications

Part number: IXBH9N160G
Manufacturer: IXYS Corporation
File Size: 177.33 KB
Datasheet: IXBH9N160G_IXYSCorporation.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON
* MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage
* Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Charact

Applications

* Flyback Converters
* DC Choppers
* Uninterruptible Power Supplies (UPS)
* Switched-Mode & Resonant-Mode Power Supplies
* CRT Deflection
* Lamp Ballasts ©2019 IXYS CORPORATION, All Rights Reserved. DS100970A(5/19) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specif

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IXBH9N160G Monolithic Bipolar MOS Transistor IXYS Corporation

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