IXYS
IXBP5N160G - High Voltage BIMOSFET
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G IXBH 5N160 G
IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns
Prelimin
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High Voltage BIMOSFETTM Monolithic Bipolar MOS Tra.
IXYS
IXBP5N160G Distributor
