Preliminary Technical Information BiMOSFETTM Mono.
IXBX75N170A - Bipolar MOS Transistor
BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A VCES = I = C90 VCE(sat) t = fi(typ) 1700V 65A 6.00V 60ns Symbol VCES VC.IXBX75N170 - Bipolar MOS Transistor
Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES = I = C110 ≤ VCE(sat) 1700V 75A 3.1V.