* z International Standard Packages z High Blocking Voltage z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement z Intergrated Diode Can Be Used for Protection Applications z Capacitor Discharge z AC Switches z Switch-Mode and Resonant-M
IXBX75N170 Datasheet (235.40 KB)
IXBX75N170
IXYS
235.40 KB
Bipolar mos transistor.
Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES = I = C110 ≤ VCE(sat) 1700V 75A 3.1V.
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