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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBX25N250
VCES = IC90 = VCE(sat) ≤
2500V 25A 3.3V
Symbol
VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA
(RBSOA)
PC
TJ TJM Tstg
TL TSOLD FC
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 4.7Ω Clamped Inductive Load TC = 25°C
1.6mm (0.062 in.) From Case for 10s Plastic Body for 10 seconds Mounting Force
Maximum Ratings
2500
V
2500
V
± 20
V
± 30
V
55
A
25
A
180
A
ICM = 80
A
VCES ≤ 2000
V
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300 260
20..120 / 4.5..27
°C °C
N/lb.
IXBX25N250 Datasheet
