IXBD4410 Datasheet | IXYS

Description Package Temperature Range IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP Full-Feature Low-Side Driver 16-Pin SO Full-Feature High-Side Driver 16-Pin SO -40 to +85°C -40 to +85°C -40 to +85°C -40 to +85°C The IXBD4410/IXBD4411 ISOSMART chipset is designed to control the gates of two Power MOSFETs or Power IGBTs that are connected in a halfbridge (phase-leg) configuration for driving multiple-phase motors, or used in applications that require half-bridge power circuits. The IXBD4410/ IXBD4411 is a full-feature chipset consisting of two 16-Pin DIP or SO devices interfaced and isolated by two small-signal ferrite pulse transformers. The small-signal transformers provide greater than 1200 V isolation. Even with mutating noise ambients greater than ±50 V/ns and up to 1200 V potentials, this chipset establishes error-free two-way munications between the system ground-reference IXBD4410 and the inverter output- reference IXBD4411. They incorporate undervoltage VDD or VEE lockout and overcurrent or desaturation shutdown to protect the IGBT or Power MOSFET devices from damage. The chipset provides the necessary gate drive signals to fully control the grounded-source low-side power device as well as the floating-source high-side power device. Additionally, the IXBD4410/4411 chipset provides a negative-going, off-state gate drive signal for improved turn-off of IGBTs or Power MOSFETs and a system logicpatible status fault output FLT to indicate overcurrent or desaturation, and undervoltage VDD or VEE. During a status fault, both chipset keep their respective gate drive outputs off; at VEE. Features z z z z z z z z z z z z z z 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary low-to-high side level translation and munication On-chip negative gate-drive supply to ensure Power...