IXFH160N15T2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXFH160N15T2 ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(M

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Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH160N15T2 V

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