Preliminary Technical Information TrenchT2TM Hipe.
INCHANGE
IXFP110N15T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXFP110N15T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche vol.
IXYS Corporation
IXFP110N15T2 - Power MOSFET
Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on) 150V 110A 13m N-Channel Enh.
