IXYS
IXGJ50N60C4D1 - High-Gain IGBT
High-Gain IGBT w/ Diode
(Electrically Isolated Tab)
Preliminary Technical Information
IXGJ50N60C4D1
VCES = IC110 = V ≤ CE(sat)
600V 21A 2.50V
Hig
(5 views)
High-Gain IGBT w/ Diode (Electrically Isolated Tab.
IXYS
IXGJ50N60C4D1 Distributor
