IXGJ50N60C4D1 (IXYS)
High-Gain IGBT
High-Gain IGBT w/ Diode
(Electrically Isolated Tab)
Preliminary Technical Information
IXGJ50N60C4D1
VCES = IC110 = V ≤ CE(sat)
600V 21A 2.50V
Hig
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High-Gain IGBT w/ Diode (Electrically Isolated Tab.
High-Gain IGBT
IXGJ50N60C4D1 Distributor
