IXGJ50N60C4D1 Description
+150 °C 300 260 20..120 / 4.5..27 °C °C N/lb. 2500 V~ 4.0 g G CE Isolated Tab G = Gate C = Collector E = Emitter.
IXGJ50N60C4D1 is High-Gain IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGJ40N60C2D1 | HiPerFAST IGBT |
| IXG50I4500KN | X2PT IGBT |
| IXGA150N33TC | IGBT |
| IXGA15N120B2 | IGBT |
| IXGA16N60C2D1 | IGBT |
+150 °C 300 260 20..120 / 4.5..27 °C °C N/lb. 2500 V~ 4.0 g G CE Isolated Tab G = Gate C = Collector E = Emitter.