Datasheet4U Logo Datasheet4U.com

IXGJ50N60C4D1 Datasheet High-Gain IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.50V High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60 Hz, RM, t = 1min Maximum Ratings 600 V 600 V ±20 V ±30 V 52 A 21 A 12 A 220 A ICM = 72 A ≤ VCE VCES 125 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 20..120 / 4.5..27 °C °C N/lb. 2500 V~ 4.

📥 Download Datasheet

Key Features

  • z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 125°C Characteristic.

IXGJ50N60C4D1 Distributor & Price

Compare IXGJ50N60C4D1 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXGJ40N60C2D1 HiPerFAST IGBT
IXG50I4500KN X2PT IGBT
IXGA150N33TC IGBT
IXGA15N120B2 IGBT
IXGA16N60C2D1 IGBT
IXGA20N250HV High Voltage IGBT
IXGA28N60A3 Ultra Low Vsat PT IGBT
IXGA30N60C3C1 High-Speed PT IGBT
IXGA7N60CD1 IGBT
IXGB200N60B3 Medium speed low Vsat PT IGBT