
IXGX32N170AH1 - High-Voltage IGBT
High Voltage IGBT with Diode
IXGX 32N170AH1
VCES IC25 V
CE(sat)
tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
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High Voltage IGBT with Diode IXGX 32N170AH1 VCES.
IXGX32N170AH1 Distributor