High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A 18 A 110 A E SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 A @ 0.8 VCES tSC TJ = 125°C, VCE = 1200
Datasheet Details
Part number:
IXGX32N170AH1
Manufacturer:
IXYS
File Size:
720.56 KB
Description:
High-voltage igbt.