IXGX32N170AH1 Datasheet - IXYS

IXGX32N170AH1 High-Voltage IGBT

High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A 18 A 110 A E SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 A @ 0.8 VCES tSC TJ = 125°C, VCE = 1200.

IXGX32N170AH1 Features

* z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power

IXGX32N170AH1_IXYS.pdf