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IXGX32N170AH1 Datasheet - IXYS

IXGX32N170AH1, High-Voltage IGBT

High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings .
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IXGX32N170AH1_IXYS.pdf

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Datasheet Details

Part number:

IXGX32N170AH1

Manufacturer:

IXYS

File Size:

720.56 KB

Description:

High-Voltage IGBT

Applications

* z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies BVCES V GE(th) IC = 1mA, VGE = 0 V I C = 250 μA, V CE = V GE 1700 3.0 V 5.0 V ICES VCE = 0.8

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