IXGX50N60C2D1 Datasheet - IXYS Corporation

IXGX50N60C2D1 High Speed IGBT

www.DataSheet4U.com HiPerFASTTM IGBT with Diode IXGK 50N60C2D1 IXGX 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi(typ) Preliminary Data Sheet = 600 V = 75 A = 2.5 V = 48 ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient Maximum Ratings 600 V 600 V ±20 V ±30 V TC = 25°C (limited by leads) TC = 110°C TC = 110°C TC = 25°C, 1 ms 75 A 50 A 4.

IXGX50N60C2D1 Features

* Very high frequency IGBT and anti-parallel FRED in one package

* Square RBSOA

* High current handling capability

* MOS Gate turn-on for drive simplicity

* Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications

* Switch-mode

IXGX50N60C2D1_IXYSCorporation.pdf