IXGX120N120B3, IXGK120N120B3 Datasheet - IXYS

IXGX120N120B3 High Speed Low Vsat PT IGBT

Advance Technical Information GenX3TM 1200V IGBTs IXGK120N120B3 IXGX120N120B3 High Speed Low Vsat PT IGBTs for 3-20 kHz Switching VCES = IC90 = VCE(sat) ≤ 1200V 120A 3.0V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = .

IXGX120N120B3 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2009 IX

IXGK120N120B3-IXYS.pdf