IXGX50N60AU1 Datasheet - IXYS Corporation

IXGX50N60AU1 HiPerFAST IGBT

www.DataSheet4U.com Preliminary data HiPerFASTTM IGBT with Diode Combi Pack IXGX50N60AU1 IXGX50N60AU1S VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C, limited by leads TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 2.

IXGX50N60AU1 Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Hole-less TO-247 for clip mount High current capability High frequency IGBT and antiparallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast R

IXGX50N60AU1_IXYSCorporation.pdf