IXGX120N120A3, IXGK120N120A3 Datasheet - IXYS

IXGX120N120A3 Ultra-Low Vsat PT IGBT

Preliminary Technical Information GenX3TM A3-Class IGBTs Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGK120N120A3 IXGX120N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 120A 2.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit TC = 25.

IXGX120N120A3 Features

* z Optimized for Low Conduction Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Balla

IXGK120N120A3-IXYS.pdf