IXGX55N120A3H1 Datasheet - IXYS

IXGX55N120A3H1 1200V IGBT

GenX3TM 1200V IGBTs w/ Diode Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC110 = VCE(sat) ≤ 1200V 55A 2.3V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Li.

IXGX55N120A3H1 Features

* z Optimized for Low Conduction Losses z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits ©

IXGX55N120A3H1 Datasheet (131.31 KB)