* International standard packages JEDEC TO-264 and PLUS247TM
* Low switching losses, low V(sat)
* MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC =
IXGX35N120BD1 Datasheet (40.14 KB)
IXGX35N120BD1
IXYS
40.14 KB
Igbt.
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1
V = 1200 V CES
IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty.
📁 Related Datasheet
IXGX35N120B - IGBT
(IXYS)
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1
V = 1200 V CES
IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty.
IXGX35N120C - HiPerFAST IGBT
(IXYS Corporation)
..
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1
(D1)
VCES = 1200 V IC25 = 70 A.
IXGX35N120CD1 - HiPerFAST IGBT
(IXYS Corporation)
..
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1
(D1)
VCES = 1200 V IC25 = 70 A.
IXGX320N60A3 - 600V IGBT
(IXYS)
GenX3TM 600V IGBT
Ultra-Low Vsat PT IGBTs for up to 5kHz Switching
IXGK320N60A3 IXGX320N60A3
VCES = IC110 = VCE(sat)
600V 210A 1.30V
Symbol
VCES.
IXGX320N60B3 - Medium-Speed Low-Vsat PT IGBT
(IXYS)
Preliminary Technical Information
GenX3TM 600V IGBTs
IXGK320N60B3 IXGX320N60B3
VCES = IC90 = VCE(sat) ≤
600V 320A 1.6V
Medium-Speed Low-Vsat PT I.
IXGX32N170AH1 - High-Voltage IGBT
(IXYS)
High Voltage IGBT with Diode
IXGX 32N170AH1
VCES IC25 V
CE(sat)
tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
.
IXGX32N170H1 - High Voltage IGBT
(IXYS)
High Voltage IGBT with Diode
Advance Technical Information
IXGX 32N170H1
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 290 ns
Symbol
Tes.
IXGX120N120A3 - Ultra-Low Vsat PT IGBT
(IXYS)
Preliminary Technical Information
GenX3TM A3-Class IGBTs
Ultra-Low Vsat PT IGBTs for up to 3kHz Switching
IXGK120N120A3 IXGX120N120A3
VCES = IC110 .
