IXGX32N170H1 Datasheet - IXYS

IXGX32N170H1 High Voltage IGBT

High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 32 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 90 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10.

IXGX32N170H1 Features

* z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power

IXGX32N170H1-IXYS.pdf