IXYS
IXGX32N170H1 - High Voltage IGBT
High Voltage IGBT with Diode
Advance Technical Information
IXGX 32N170H1
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 290 ns
Symbol
Tes
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High Voltage IGBT with Diode Advance Technical In.
IXYS
IXGX32N170H1 Distributor
