IXKH30N60C5 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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IXKH 30N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 30 A VDSS = 600 V RDS(on

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