Preliminary Technical Information TrenchMVTM Powe.
IXTA160N10T7 - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160.IXTA160N10T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) .IXTA160N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTA160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vol.