IXTA160N10T Datasheet | Specifications & PDF Download

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IXTA160N10T Power MOSFET

Preliminary Technical Information TrenchMVTM Powe.

IXYS Corporation

IXTA160N10T7 - Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160.
Rating: 1 (2 votes)
IXYS Corporation

IXTA160N10T - Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) .
Rating: 1 (1 votes)
INCHANGE

IXTA160N10T - N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTA160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vol.
Rating: 1 (1 votes)
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