TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055.
IXTA200N055T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.IXTA200N055T2 - Power MOSFET
TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Sym.IXTA200N055T2-7 - Power MOSFET
TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avala.