Preliminary Technical Information TrenchMVTM Powe.
IXTA200N075T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA200N075T IXTP200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.IXTA200N075T7 - Power MOSFET
Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 20.IXTA200N075T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.