IXTC160N10T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari

Rating: 1 ★ (6 votes)

Preliminary Technical Information TrenchMVTM IXTC160N10T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche R

Rating: 1 ★ (4 votes)