IXTC96N25T Datasheet | Specifications & PDF Download

Preliminary Technical Information Trench Gate IXTC96N25T Power MOSFET (Electrically Isolated Back Surface) VDSS = ID25 = RDS(on) ≤ 250V 40A 31mΩ

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Swi

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