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IXTC96N25T - Power MOSFET

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate z Isolated mounting surface z 2500V electrical isolation z Low drain to tab capacitance (< 30pF) Advantages z Easy assembly z Space savings z High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 48A, Note 1 Characteristic Values Min. Typ. Max. 250 V 3 5V ± 200 n.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information Trench Gate IXTC96N25T Power MOSFET (Electrically Isolated Back Surface) VDSS = ID25 = RDS(on) ≤ 250V 40A 31mΩ N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol VDSS VDGR VGSM ID25 IDM IAS EAS PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient Maximum Ratings 250 V 250 V ± 30 V TC = 25°C TC = 25°C, pulse width limited by TJM 40 A 230 A TC = 25°C TC = 25°C 5 A 2 J TC = 25°C 147 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds 300 °C 260 °C 50/60Hz, t = 1 minute, IISOL < 1mA, RMS 2500 Mounting force 11..65 / 2.5..14.6 V N/lb.