Preliminary Technical Information TrenchMVTM Powe.
IXTH152N085T - N-Channel MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) .IXTH152N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.