IXTH180N10T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)

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