IXTH30N60L2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Sw

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Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IX

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