IXTN200N10T Datasheet | Specifications & PDF Download
IXTN200N10T Power MOSFET
Preliminary Technical Information TrenchMVTM Powe.
IXYS
IXTN200N10T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 = 200A RDS(on) ≤ .
Rating:
1
★
(2 votes)
Since 2006. D4U Semicon. |
Datasheet4U.com
|
Contact Us
|
Privacy Policy
|
Purchase of parts
IXYS
