* z International standard package z miniBLOC, with Aluminium nitride isolation z Avalanche Rated z Low RDS(ON) and QG z Low package inductance z Fast intrinsic Rectifier Advantages
* Low gate charge drive requirement
* High power density Applications
* DC-DC coverters
IXTN200N10T Datasheet (162.31 KB)
IXTN200N10T
IXYS
162.31 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTN200N10T
VDSS = 100V
ID25 = 200A RDS(on) ≤ .
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