Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 = 200A RDS(on) ≤ 5.5mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mou
Datasheet Details
Part number:
IXTN200N10T
Manufacturer:
IXYS
File Size:
162.31 KB
Description:
Power mosfet.