IXTN200N10T Datasheet - IXYS

IXTN200N10T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 = 200A RDS(on) ≤ 5.5mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mou.

IXTN200N10T Features

* z International standard package z miniBLOC, with Aluminium nitride isolation z Avalanche Rated z Low RDS(ON) and QG z Low package inductance z Fast intrinsic Rectifier Advantages

* Low gate charge drive requirement

* High power density Applications

* DC-DC coverters

IXTN200N10T-IXYS.pdf