IXTN200N10T Power MOSFET

IXYS

Description

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 = 200A RDS(on) ≤ .

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Datasheet Specifications

Part number: IXTN200N10T
Manufacturer: IXYS
File Size: 162.31 KB
Datasheet: IXTN200N10T-IXYS.pdf
Description: Power MOSFET

Features

* z International standard package z miniBLOC, with Aluminium nitride isolation z Avalanche Rated z Low RDS(ON) and QG z Low package inductance z Fast intrinsic Rectifier Advantages
* Low gate charge drive requirement

Applications

* DC-DC coverters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC and DC motor drives
* Uninterrupted power supplies
* High speed power switching applications © 2008 IXYS CORPORATION, All rights reserved

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IXTN200N10T Power MOSFET IXYS

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