* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Internationalstandardpackage
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC,
IXTN120N25 Datasheet (574.66 KB)
IXTN120N25
IXYS
574.66 KB
Power mosfet.
High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test con.
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