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IXTN120N25

Power MOSFET

IXTN120N25 Features

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Internationalstandardpackage

* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC,

IXTN120N25 Datasheet (574.66 KB)

Preview of IXTN120N25 PDF

Datasheet Details

Part number:

IXTN120N25

Manufacturer:

IXYS

File Size:

574.66 KB

Description:

Power mosfet.
High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test con.

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TAGS

IXTN120N25 Power MOSFET IXYS

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