High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TTJsMtg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2
Datasheet Details
Part number:
IXTN120N25
Manufacturer:
IXYS
File Size:
574.66 KB
Description:
Power mosfet.