IXTN120N25 Power MOSFET

IXYS

Description

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test con.

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Datasheet Specifications

Part number: IXTN120N25
Manufacturer: IXYS
File Size: 574.66 KB
Datasheet: IXTN120N25-IXYS.pdf
Description: Power MOSFET

Features

* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Internationalstandardpackage
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC,

Applications

* Motorcontrols
* DC choppers
* Switched-mode power supplies Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density © 2003 IXYS All rights reserved DS98879D(11/03) IXTK 120N25 Symbol Test Cond

IXTN120N25 Distributors

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IXTN120N25 Power MOSFET IXYS

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