High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263
IXTA05N100_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTA05N100
Manufacturer:
IXYS Corporation
File Size:
190.35 KB
Description:
Power mosfet.