IXTA05N100 Datasheet - IXYS Corporation

IXTA05N100, Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.

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IXTA05N100_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA05N100

Manufacturer:

IXYS Corporation

File Size:

190.35 KB

Description:

Power MOSFET

Features

* High Voltage Package (TO-263HV)
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA Advantages
* High Power Density

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Flyback Inverters
* DC Choppers © 2014 IXYS CORPORATION, All rights reserved DS98736F(5/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 500mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1

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IXTA05N100 Power MOSFET IXYS Corporation

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