IXTA05N100 Datasheet - IXYS Corporation

IXTA05N100 Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263 .

IXTA05N100 Features

* High Voltage Package (TO-263HV)

* Fast Switching Times

* Avalanche Rated

* Rds(on) HDMOSTM Process

* Rugged Polysilicon Gate Cell structure

* Extended FBSOA Advantages

* High Power Density

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Suppli

IXTA05N100_IXYSCorporation.pdf

IXTA05N100 Datasheet Preview — Preview of IXTA05N100 PDF

Datasheet Details

Part number:

IXTA05N100

Manufacturer:

IXYS Corporation

File Size:

190.35 KB

Description:

Power mosfet.

📁 Related Datasheet

IXTA05N100 N-Channel MOSFET (INCHANGE)

IXTA05N100HV Power MOSFET (IXYS)

IXTA02N250 High Voltage Power MOSFET (IXYS)

IXTA02N250HV High Voltage Power MOSFET (IXYS)

IXTA02N450HV High Voltage Power MOSFETs (IXYS)

IXTA06N120P Power MOSFET (IXYS)

IXTA08N100D2 Power MOSFET (IXYS)

IXTA08N100D2HV High Voltage Depletion Mode Power MOSFET (IXYS)

TAGS

IXTA05N100 IXTA05N100 Power MOSFET IXYS Corporation

IXTA05N100 Distributor