High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Maximum Ratings 2500 V 2500 V ±20 V ±30 V 20
Datasheet Details
Part number:
IXTA02N250HV
Manufacturer:
IXYS
File Size:
192.64 KB
Description:
High voltage power mosfet.