IXTA02N250HV High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Int.

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Datasheet Specifications

Part number: IXTA02N250HV
Manufacturer: IXYS
File Size: 192.64 KB
Datasheet: IXTA02N250HV-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100535(04/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(o

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IXTA02N250HV High Voltage Power MOSFET IXYS

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