IXTA02N250HV Datasheet - IXYS

IXTA02N250HV High Voltage Power MOSFET

High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Maximum Ratings 2500 V 2500 V ±20 V ±30 V 20.

IXTA02N250HV Features

* z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS

IXTA02N250HV-IXYS.pdf