IXTA02N250HV Datasheet - IXYS

IXTA02N250HV, High Voltage Power MOSFET

High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Int.

datasheet Preview Page 1 from Datasheet4u.com

IXTA02N250HV-IXYS.pdf

IXTA02N250HV Datasheet Preview — Preview of IXTA02N250HV PDF

Datasheet Details

Part number:

IXTA02N250HV

Manufacturer:

IXYS

File Size:

192.64 KB

Description:

High Voltage Power MOSFET

Features

* z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100535(04/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(o

IXTA02N250HV Distributors

📁 Related Datasheet

IXTA05N100 IXTA08N100P IXTA08N50D2 IXTA100N04T2 IXTA102N15T IXTA10N60P

📌 All Tags

IXTA02N250HV High Voltage Power MOSFET IXYS

IXYS IXTA02N250HV-like datasheet