IXTA02N250HV Datasheet, Mosfet, IXYS

IXTA02N250HV Features

  • Mosfet z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Ot

PDF File Details

Part number:

IXTA02N250HV

Manufacturer:

IXYS

File Size:

192.64kb

Download:

📄 Datasheet

Description:

High voltage power mosfet.

Datasheet Preview: IXTA02N250HV 📥 Download PDF (192.64kb)
Page 2 of IXTA02N250HV Page 3 of IXTA02N250HV

IXTA02N250HV Application

  • Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100535(04/13) Sy

TAGS

IXTA02N250HV
High
Voltage
Power
MOSFET
IXYS

📁 Related Datasheet

IXTA02N250 - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450.

IXTA02N450HV - High Voltage Power MOSFETs (IXYS)
High Voltage Power MOSFETs Advance Technical Information IXTA02N450HV IXTT02N450HV VDSS I D25 RDS(on) = 4500V = 200mA ≤ 750Ω N-Channel Enhancemen.

IXTA05N100 - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.

IXTA05N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltage and curren.

IXTA05N100HV - Power MOSFET (IXYS)
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.

IXTA06N120P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA06N120P IXTP06N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM T.

IXTA08N100D2 - Power MOSFET (IXYS)
Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab).

IXTA08N100D2HV - High Voltage Depletion Mode Power MOSFET (IXYS)
High Voltage Depletion Mode Power MOSFET IXTA08N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 N-Channel G S Symbol VDSX VDGX VGSX VGSM PD .

IXTA08N100P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche voltage and curren.

IXTA08N100P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.

Stock and price

Littelfuse Inc
MOSFET N-CH 2500V 200MA TO263HV
DigiKey
IXTA02N250HV-TRL
0 In Stock
Qty : 800 units
Unit Price : $7.07
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts