Datasheet Details
- Part number
- IXTA02N250HV
- Manufacturer
- IXYS
- File Size
- 192.64 KB
- Datasheet
- IXTA02N250HV-IXYS.pdf
- Description
- High Voltage Power MOSFET
IXTA02N250HV Description
High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Int.
IXTA02N250HV Features
* z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance
Advantages z Easy to Mount z Space Savings
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±20V, VDS = 0V
IDSS
IXTA02N250HV Applications
* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits
© 2013 IXYS CORPORATION, All Rights Reserved
DS100535(04/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 100V, ID = 0.5
* ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(o
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