Datasheet4U Logo Datasheet4U.com

IXTA02N250HV - High Voltage Power MOSFET

IXTA02N250HV Description

High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Int.

IXTA02N250HV Features

* z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS

IXTA02N250HV Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100535(04/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(o

📥 Download Datasheet

Preview of IXTA02N250HV PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IXTA02N250HV
Manufacturer
IXYS
File Size
192.64 KB
Datasheet
IXTA02N250HV-IXYS.pdf
Description
High Voltage Power MOSFET

📁 Related Datasheet

📌 All Tags

IXYS IXTA02N250HV-like datasheet