IXTA08N100D2HV Datasheet - IXYS

IXTA08N100D2HV - High Voltage Depletion Mode Power MOSFET

High Voltage Depletion Mode Power MOSFET IXTA08N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 N-Channel G S Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 1000 V 1000 V 20 V 30 V TC = 25C 60 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 10..65 / .

IXTA08N100D2HV Features

* High Voltage Package

* Normally ON Mode

*  International Standard Package

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

IXTA08N100D2HV-IXYS.pdf