IXTA08N100D2HV Datasheet - IXYS

IXTA08N100D2HV High Voltage Depletion Mode Power MOSFET

High Voltage Depletion Mode Power MOSFET IXTA08N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 N-Channel G S Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 1000 V 1000 V 20 V 30 V TC = 25C 60 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 10..65 / .

IXTA08N100D2HV Features

* High Voltage Package

* Normally ON Mode

*  International Standard Package

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

IXTA08N100D2HV-IXYS.pdf

IXTA08N100D2HV Datasheet Preview — Preview of IXTA08N100D2HV PDF

Datasheet Details

Part number:

IXTA08N100D2HV

Manufacturer:

IXYS

File Size:

229.42 KB

Description:

High voltage depletion mode power mosfet.

📁 Related Datasheet

IXTA08N100D2 Power MOSFET (IXYS)

IXTA08N100P N-Channel MOSFET (INCHANGE)

IXTA08N100P Power MOSFET (IXYS)

IXTA08N50D2 N-Channel MOSFET (IXYS Corporation)

IXTA02N250 High Voltage Power MOSFET (IXYS)

IXTA02N250HV High Voltage Power MOSFET (IXYS)

IXTA02N450HV High Voltage Power MOSFETs (IXYS)

IXTA05N100 Power MOSFET (IXYS Corporation)

TAGS

IXTA08N100D2HV IXTA08N100D2HV High Voltage Depletion Mode Power MOSFET IXYS

IXTA08N100D2HV Distributor