IXTA05N100HV, IXTA05N100 Datasheet - IXYS

IXTA05N100HV - Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263

IXTA05N100HV Features

* High Voltage Package (TO-263HV)

* Fast Switching Times

* Avalanche Rated

* Rds(on) HDMOSTM Process

* Rugged Polysilicon Gate Cell structure

* Extended FBSOA Advantages

* High Power Density

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Suppli

IXTA05N100_IXYSCorporation.pdf