IXTA02N250 High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450.

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Datasheet Specifications

Part number: IXTA02N250
Manufacturer: IXYS
File Size: 239.07 KB
Datasheet: IXTA02N250_IXYS.pdf
Description: High Voltage Power MOSFET

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100187C(04/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(o

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IXTA02N250 High Voltage Power MOSFET IXYS

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