IXTA02N250 Datasheet - IXYS

IXTA02N250, High Voltage Power MOSFET

High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450.

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Datasheet Details

Part number:

IXTA02N250

Manufacturer:

IXYS

File Size:

239.07 KB

Description:

High Voltage Power MOSFET

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100187C(04/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(o

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IXTA02N250 High Voltage Power MOSFET IXYS

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