Datasheet Details
- Part number
- IXTA10N60P
- Manufacturer
- INCHANGE
- File Size
- 250.68 KB
- Datasheet
- IXTA10N60P-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTA10N60P Description
isc N-Channel MOSFET Transistor *.
IXTA10N60P Features
* Static drain-source on-resistance:
RDS(on) ≤ 740mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTA10N60P Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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