IXTA100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTA100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTA102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA102N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA10N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA10N60P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
IXTA10N60P IXTP10N60P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = 600V ID25 = 10A RDS(on) ≤ 740.