IXTA12N50P
IXYS
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Power mosfet.
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IXTA12N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.5Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA12N65X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N65X2 IXTP12N65X2 IXTH12N65X2
VDSS = ID25 = RDS(on)
650V.
IXTA12N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA12N65X2
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 300mΩ@V.
IXTA12N70X2 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IXTA12N70X2
·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% .
IXTA12N70X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N70X2 IXTP12N70X2 IXTH12N70X2
VDSS =
ID25 = RDS(on)
700.
IXTA120N04T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
IXTA120N04T2 IXTP120N04T2
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
40V 120A 6.1mΩ
TO-263
Symbo.
IXTA120N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA120N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.1mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTA120N075T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA120N075T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.7mΩ@VGS=10V ·100% avalanche tested ·Minimum .
IXTA120N075T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA120N075T2 IXTP120N075T2
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg .
IXTA100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
