* °C Ultra-low On Resistance °C °C Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) B
IXTA110N055T7 Datasheet (189.45 KB)
IXTA110N055T7
IXYS Corporation
189.45 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110.
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