Datasheet Details
- Part number
- IXTA110N055T7
- Manufacturer
- IXYS Corporation
- File Size
- 189.45 KB
- Datasheet
- IXTA110N055T7-IXYSCorporation.pdf
- Description
- Power MOSFET
IXTA110N055T7 Description
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110.
IXTA110N055T7 Features
* °C Ultra-low On Resistance
°C °C
Unclamped Inductive Switching (UIS) rated
Low package inductance
°C - easy to drive and to protect
°C 175 ° C Operating Temperature
g Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
B
IXTA110N055T7 Applications
* Automotive - Motor Drives - High Side Switch - 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99680 (11/06)
IXTA110N055T7
Symbol
Test Conditions
(TJ = 25° C unless otherwise spec
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