IXTA110N055T7 Datasheet - IXYS Corporation

IXTA110N055T7, Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110.

IXTA110N055T7-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA110N055T7

Manufacturer:

IXYS Corporation

File Size:

189.45 KB

Description:

Power MOSFET

Features

* °C Ultra-low On Resistance °C °C Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) B

Applications

* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99680 (11/06) IXTA110N055T7 Symbol Test Conditions (TJ = 25° C unless otherwise spec

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IXTA110N055T7 Power MOSFET IXYS Corporation

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