* °C °C °C Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDS
IXTA152N085T7 Datasheet (187.66 KB)
IXTA152N085T7
IXYS Corporation
187.66 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM IXTA152N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 15.
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