IXTA130N10T7 Datasheet - IXYS Corporation

IXTA130N10T7 Power MOSFET

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T7 VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL T SOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise speci.

IXTA130N10T7 Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175°C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-

IXTA130N10T7 Datasheet (128.87 KB)