IXTA102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA102N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTA100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA100N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA100N15X4 IXTP100N15X4
VDSS = ID25 = RDS(on)
150V 100A 11.5m
N-Channel Enhancement Mode.
IXTA10N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA10N60P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
IXTA10N60P IXTP10N60P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = 600V ID25 = 10A RDS(on) ≤ 740.