IXTA02N450HV Datasheet - IXYS

IXTA02N450HV High Voltage Power MOSFETs

High Voltage Power MOSFETs Advance Technical Information IXTA02N450HV IXTT02N450HV VDSS I D25 RDS(on) = 4500V = 200mA ≤ 750Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C Maximum Ratings 4500 V 4500 V ±20 V ±30 V 200 mA 600 mA 113 W - 55 +150 °C 150 °C - 55 +150 °C 1.6mm (0.

IXTA02N450HV Features

* z High Blocking Voltage z High Voltage Packages Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge Applications z Pulse Circuits z Laser and X-Ray Generation Systems © 2012 IXYS CORPORATION, All Rights Reserved DS100498(

IXTA02N450HV-IXYS.pdf